Firstly, PSMs were prepared by the pulsed electrochemical etching method and the experimental conditions were optimized.
用电化学脉冲腐蚀法制备多孔硅微腔，优化了实验参数。
In the third chapter Porous silicon was prepared by pulsed and dc electrochemical etching methods under the equivalent etching condition.
第三章研究了用脉冲电化学腐蚀制备均匀发光多孔硅。
应用推荐